Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• . The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface

• the backlight for non-emissive displays. The degradation of oxide-based TFTs under this kind of negative-bias-illumination-stress (NBIS) is a key issue that has been investigated over the last decade [6][7]. Despite all efforts to unveil the mechanisms of NBIS, such as first-principles calculations

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the TIGZO when the photon energy of

• . Keywords: active layer thickness; gate bias; illumination stress; InGaZnO; photoleakage current; thin-film transistors; Introduction Over the last decade, the amorphous oxide-based semiconductor thin-film transistors (AOS TFTs) have attracted global attention for use in advanced display technologies due

• electrons are excited from the trapped states existing near the valence band (EV). In addition, the a-IGZO TFTs inevitably suffer electrical and optical stresses during practical operation conditions, especially for the negative bias and illumination stress (NBIS) tests [11][12][13][14][15][16], which leads